High-voltage characteristics and other key features of the SiC-based inverter.
ROHM and Schaeffler, a leading German automotive supplier, have started mass production on a high-voltage inverter module using ROHM's silicon-carbide (SiC) MOSFET bare chips as part of their strategic partnership. Intended for a major Chinese car manufacturer, the Schaeffler inverter subassembly is the essential power-device building block to control the electric drive via logic signals.
The performance characteristics of the inverter brick has been optimized. Schaeffler increased the output of the brick by boosting the maximum battery voltage to more than the usual 800 V, with RMS currents of up to 650 A, making the sub-module a compact power pack.
The characteristics of the sub-module leverage ROHM power semiconductors. They enable the frame-mounted sub-module to have a high power density while being efficient and ease integration into various inverters through a modular and scalable design.
The sub-module incorporates the power module for pulse-width modulation (PWM) of the current pulses, the DC link capacitor, a DC link, and a cooler. In addition, the brick has a DC boost function. Therefore, a vehicle with an 800-V architecture can also be charged at a 400-V charging station at a charging speed of 800 V.